ASUS ROG GA401QE-K2117 RAM upgrade specifications

ASUS GA401QE-K2117 ASUS GA401QE-K2117 ASUS GA401QE-K2117 ASUS GA401QE-K2117 ASUS GA401QE-K2117

ASUS ROG Zephyrus G14 GA401QE-K2117 upgrade specifications feature DDR4-SDRAM memory compatible with single SO-DIMM slot configuration. Maximum RAM capacity reaches 24 GB through upgradeable memory module addition to existing on-board memory. Supported frequency specification is 3200 MHz. Compatible upgrade slots accommodate standard SO-DIMM form factor memory modules for capacity expansion on the specified laptop model.

Memory Upgrade Specifications

SpecificationValue
Memory slots1x SO-DIMM
Form factorOn-board + SO-DIMM
Memory typeDDR4-SDRAM
Frequency3200 MHz
Maximum RAM24 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-3200 (PC4-25600)
Bandwidth25.6 GB/s
Laptop Release date19 August 2021

Additional Notes

  • The ASUS ROG GA401QE-K2117 contains soldered on-board memory that cannot be removed, meaning maximum capacity depends entirely on the single accessible SO-DIMM slot.
  • A 24 GB ceiling indicates 16 GB of on-board memory, as standard SO-DIMM modules max out at 8 GB in DDR4 form factor; upgrades cannot exceed this hybrid configuration.
  • DDR4-3200 MHz operation requires matching the frequency of any replacement module to the motherboard's native speed; installing slower modules will downclock the entire system to the slower module's rating.
  • SO-DIMM physical constraints restrict upgrade options to laptop-grade memory; desktop DDR4-UDIMM modules are mechanically incompatible and will not seat in the connector.
  • The single upgradeable slot creates a zero-redundancy scenario; failure of the SO-DIMM leaves only the non-replaceable on-board 16 GB functional, with no expansion recovery path.
  • Warranty coverage for memory upgrades typically remains intact only when using modules from ASUS-approved vendor lists; third-party DDR4-3200 SO-DIMMs may trigger support restrictions.
  • Bandwidth saturation risk exists if on-board and SO-DIMM memory operate on different bus channels, potentially creating latency asymmetry during concurrent access patterns in multithreaded workloads.