MSI Gaming GE63 9SF-605NL Raider RGB RAM upgrade specifications

MSI GE63 9SF-605NL Raider RGB MSI GE63 9SF-605NL Raider RGB MSI GE63 9SF-605NL Raider RGB MSI GE63 9SF-605NL Raider RGB MSI GE63 9SF-605NL Raider RGB

The MSI GE63 9SF-605NL Raider RGB Gaming series laptop features DDR4-SDRAM memory specifications with two SO-DIMM slots available for RAM upgrade. Maximum supported memory capacity reaches 64 GB total. Compatible memory modules operate at 2666 MHz frequency and utilize the SO-DIMM form factor. Current specifications allow for memory expansion through dual slot configuration, supporting DDR4 technology for enhanced performance in gaming applications. The GE63 9SF-605NL model accommodates compatible RAM upgrades up to maximum specifications listed above.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date03 May 2019

Additional Notes

  • Dual channel memory architecture requires installing matched pairs of modules to maximize available memory bandwidth for the MSI GE63 9SF-605NL Raider RGB.
  • The system operates at a maximum frequency of 2666 MHz regardless of higher rated module speeds installed in the SO DIMM slots.
  • Upgrading beyond the factory configuration necessitates the complete replacement of existing modules because the motherboard lacks additional unpopulated slots.
  • Attaining the 64 GB maximum capacity requires 2 individual 32 GB modules as the hardware does not support higher density configurations per slot.
  • Latency performance depends on the CAS latency timings of the slowest installed module due to automatic synchronization by the BIOS.
  • Standard 1.2V DDR4 memory modules are required to ensure electrical compatibility and prevent thermal throttling within the compact chassis.
  • Accessing the memory slots involves removing the entire bottom panel which exposes internal components to potential electrostatic discharge risks.