MSI Prestige P65 8RE-018FR Creator RAM upgrade specifications
MSI Prestige P series P65 8RE-018FR Creator laptop supports DDR4-SDRAM memory upgrades with 2x SO-DIMM slots. Compatible RAM modules feature SO-DIMM form factor operating at 2666 MHz frequency. Maximum memory capacity reaches 32 GB total. Specifications indicate upgrade potential for increasing system memory on this Creator-class mobile workstation model.
Memory Upgrade Specifications
| Specification | Value |
|---|---|
| Memory slots | 2x SO-DIMM |
| Form factor | SO-DIMM |
| Memory type | DDR4-SDRAM |
| Frequency | 2666 MHz |
| Maximum RAM | 32 GB |
| Voltage | 1.2V |
| Number of pins | 260-pin |
| Interface | PC4 |
| PC Speed Rating | PC4-2666 (PC4-21328) |
| Bandwidth | 21.3 GB/s |
| Laptop Release date | 02 April 2019 |
Additional Notes
- The internal layout of the MSI P65 8RE-018FR Creator utilizes a flipped motherboard design which requires the complete removal of the mainboard from the chassis to access the memory slots located on the underside.
- Dual channel memory architecture requires installing identical capacity and rank modules to achieve peak bandwidth for rendering and creative workloads.
- Installing memory with XMP profiles or clock speeds exceeding 2666 MHz results in automatic downclocking to the system bus limit governed by the Intel 8th generation processor architecture.
- Thermal pads are typically integrated into the shroud covering the memory area and must be carefully aligned during reassembly to prevent localized heat buildup near the controller.
- The 32 GB capacity threshold is dictated by the hardware addressing limits of the existing firmware and the density of the supported 16 GB individual modules.
- Upgrading beyond the factory configuration necessitates the removal of the heat pipe assembly in some revisions which may require a complete reapplication of thermal interface material to maintain cooling efficiency.
- Compatibility is restricted to 1.2V low voltage modules as the power delivery system lacks the voltage regulation overhead for older high voltage memory standards.