ACER Nitro AN515-55-745W RAM upgrade specifications

ACER AN515-55-745W ACER AN515-55-745W ACER AN515-55-745W ACER AN515-55-745W ACER AN515-55-745W

The ACER Nitro 5 series model AN515-55-745W supports DDR4-SDRAM memory upgrades with maximum capacity of 32 GB. The laptop features 2x SO-DIMM memory slots for RAM expansion. Compatible memory modules operate at 2933 MHz frequency. Upgrade specifications enable users to enhance system performance through compatible DDR4 SO-DIMM modules, with total memory capacity reaching 32 GB maximum across available slots.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2933 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2933 (PC4-23464)
Bandwidth23.5 GB/s
Laptop Release date20 May 2021

Additional Notes

  • The Acer Nitro AN515-55-745W accepts dual-channel memory configurations, enabling symmetric bandwidth distribution when both SO-DIMM slots contain identical capacity modules.
  • DDR4-2933 represents the maximum validated frequency for this platform, while higher-speed modules will function through automatic downclocking to specification limits.
  • Configurations exceeding 16 GB require both SO-DIMM slots to be populated, as single-slot installations are limited to half the advertised system maximum.
  • The SO-DIMM form factor designation excludes standard desktop DIMM modules, which are physically incompatible with the 260-pin mobile memory interface.
  • Mixing modules with different frequencies will force both sticks to operate at the slower module's rated speed, eliminating the performance advantage of the faster component.
  • Asymmetric capacity configurations (such as 8 GB paired with 16 GB) will operate in flex mode, delivering dual-channel bandwidth only up to the capacity threshold of the smaller module.
  • Non-volatile memory (such as Optane) occupies separate M.2 storage channels and does not consume or conflict with SO-DIMM memory expansion resources.
  • Modules exceeding JEDEC voltage specifications (1.2V for DDR4) may trigger thermal throttling in thermally constrained mobile chassis designs.
  • CAS latency variations between matched-frequency modules will default to the higher latency timing, marginally affecting memory access response times.
  • User-accessible memory compartments typically preserve warranty coverage, whereas soldered or factory-sealed configurations would prohibit field upgrades entirely.