ASUS ROG G814JIR-N6060W RAM upgrade specifications

ASUS G814JIR-N6060W ASUS G814JIR-N6060W ASUS G814JIR-N6060W ASUS G814JIR-N6060W ASUS G814JIR-N6060W

ASUS ROG Strix G18 model G814JIR-N6060W features DDR5-SDRAM memory upgrade specifications. The laptop contains 2x SO-DIMM slots for RAM expansion, supporting maximum capacity of 32 GB total memory. Compatible upgrades utilize DDR5 technology operating at 5600 MHz frequency. SO-DIMM form factor specifications ensure compatibility with standard laptop memory modules. These specifications define the memory upgrade parameters available for this gaming laptop model.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency5600 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-5600 (PC5-44800)
Bandwidth44.8 GB/s

Additional Notes

  • The absence of soldered memory on the ASUS G814JIR-N6060W motherboard allows for symmetrical dual-channel configurations by utilizing both physical slots.
  • The maximum capacity threshold indicates a BIOS-level or hardware limitation that prevents the use of 24 GB or 32 GB individual modules for higher total density.
  • Installation of memory modules exceeding the rated 5600 MHz frequency will result in automatic downclocking to remain within the processor integrated memory controller stability parameters.
  • Upgrading requires standard small outline dual in-line memory modules, ensuring compatibility with the specialized internal spatial clearances of high-performance gaming laptop chassis.
  • Dual-slot occupancy is necessary to realize the full potential of the DDR5 sub-channel architecture, which significantly improves data throughput in bandwidth-intensive rendering tasks.
  • Accessing the memory slots necessitates the removal of the bottom panel, which requires careful handling of internal ribbon cables to maintain the integrity of the factory warranty.
  • The DDR5 standard operates at lower voltages than previous generations, reducing heat generation within the localized vicinity of the memory slots during sustained peak loads.