ASUS TUF Gaming TUF507ZV4-LP049W RAM upgrade specifications

ASUS TUF507ZV4-LP049W ASUS TUF507ZV4-LP049W ASUS TUF507ZV4-LP049W ASUS TUF507ZV4-LP049W ASUS TUF507ZV4-LP049W

ASUS TUF Gaming F15 series model TUF507ZV4-LP049W supports DDR5-SDRAM memory upgrades. The laptop features 2x SO-DIMM slots with a maximum RAM capacity of 32 GB. Compatible memory operates at 4800 MHz frequency and utilizes SO-DIMM form factor. Specifications indicate upgrade capability for enhanced multitasking and performance-demanding applications on the TUF507ZV4-LP049W gaming platform.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date16 January 2023

Additional Notes

  • The 32 GB maximum capacity limitation stems from the chipset or processor memory controller architecture, restricting density per module to 16 GB regardless of SO-DIMM slot availability.
  • DDR5-4800 represents JEDEC baseline specification timing, indicating the system will downclock higher-frequency modules to this speed even when DDR5-5200 or DDR5-5600 rated memory is installed.
  • Dual-channel configuration requires matched module pairs in both occupied SO-DIMM slots to achieve full bandwidth potential of 76.8 GB/s aggregate throughput at the specified 4800 MHz frequency.
  • Single-rank versus dual-rank module topology affects interleaving efficiency on this ASUS TUF Gaming TUF507ZV4-LP049W platform, with dual-rank configurations typically yielding 5 to 15 percent performance gains in memory-intensive applications despite identical capacity and frequency ratings.
  • DDR5 on-die ECC operates independently of user-accessible error correction, providing internal data integrity without BIOS configuration options or operating system visibility into correction events.
  • Voltage regulation shifts to the module itself with DDR5 architecture through the onboard PMIC, eliminating motherboard-level voltage adjustment capabilities that existed with DDR4 SO-DIMM implementations.
  • The 4800 MHz JEDEC standard mandates CAS latency around CL40, producing absolute latency of approximately 16.6 nanoseconds, which is numerically higher than DDR4-3200 CL22 despite superior bandwidth characteristics.
  • Mixing modules with different die revisions from the same manufacturer can trigger stability issues due to incompatible XMP/EXPO profile subtimings, even when primary specifications appear identical on retail packaging.
  • Thermal considerations become relevant above ambient operating temperatures of 35°C, as DDR5 SO-DIMMs generate approximately 20 to 35 percent more heat than equivalent DDR4 modules under sustained memory access patterns.
  • Non-binary capacity configurations such as 12 GB or 24 GB total memory require asymmetric module pairing, which maintains dual-channel operation but introduces flex mode with reduced interleaving efficiency beyond the lower module's capacity.