ASUS Vivobook TP501UQ-DN103T RAM upgrade specifications

ASUS TP501UQ-DN103T ASUS TP501UQ-DN103T ASUS TP501UQ-DN103T ASUS TP501UQ-DN103T ASUS TP501UQ-DN103T

ASUS Vivobook Flip TP501UQ-DN103T compatible RAM upgrade specifications feature DDR4-SDRAM memory operating at 2133 MHz. The laptop contains one SO-DIMM memory slot for upgrade capacity. Maximum supported RAM reaches 12 GB total with on-board memory configuration. Compatible memory modules must match DDR4-SDRAM specifications to ensure proper functionality and system compatibility with the TP501UQ-DN103T platform.

Memory Upgrade Specifications

SpecificationValue
Memory slots1x SO-DIMM
Form factorOn-board + SO-DIMM
Memory typeDDR4-SDRAM
Frequency2133 MHz
Maximum RAM12 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2133 (PC4-17064)
Bandwidth17.1 GB/s
Laptop Release date07 September 2017

Additional Notes

  • The presence of on-board memory limits the maximum capacity expansion because only the single open SO-DIMM slot allows for physical replacement.
  • The hardware architecture creates an asymmetrical dual-channel configuration where memory speeds default to the slowest module installed to prevent system instability.
  • Upgrading beyond the 12 GB limit is restricted by a 4 GB soldered module that cannot be removed or bypassed without professional component desoldering.
  • Installing a faster 2400 MHz or 3200 MHz module results in technical downclocking to 2133 MHz due to the fixed bus speed of the soldered memory controller.
  • Total memory bandwidth is constrained by the hard limit of an 8 GB module in the single expansion slot coupled with the fixed internal 4 GB bank.
  • The thin chassis design of the Flip series necessitates a non-ECC unbuffered memory module to ensure compatibility with the standard voltage requirements of the motherboard.
  • Accessing the SO-DIMM slot requires total removal of the lower case assembly which involves navigating internal ribbon cables and potentially voiding regional warranty seals.
  • System performance in memory-intensive applications faces a bottleneck once the capacity of the smaller soldered chip is exceeded during data processing tasks.