MSI Gaming GE75 10SGS-295CA Raider RAM upgrade specifications
The MSI GE75 10SGS-295CA Raider gaming laptop contains two SO-DIMM memory slots supporting DDR4-SDRAM modules at 3200 MHz frequency. Maximum RAM capacity reaches 64 GB total when both slots are populated. Upgrade specifications indicate compatible memory modules must follow SO-DIMM form factor standards. Current memory configuration can be expanded by installing additional DDR4-SDRAM modules into available slots, provided they meet the DDR4-3200 specifications. Specifications confirm dual-slot architecture permits RAM upgrades up to the 64 GB maximum supported capacity for the Raider series laptop.
Memory Upgrade Specifications
| Specification | Value |
|---|---|
| Memory slots | 2x SO-DIMM |
| Form factor | SO-DIMM |
| Memory type | DDR4-SDRAM |
| Frequency | 3200 MHz |
| Maximum RAM | 64 GB |
| Voltage | 1.2V |
| Number of pins | 260-pin |
| Interface | PC4 |
| PC Speed Rating | PC4-3200 (PC4-25600) |
| Bandwidth | 25.6 GB/s |
| Laptop Release date | 23 September 2020 |
Additional Notes
- Dual-channel architecture requires populated pairs of matched modules to achieve maximum theoretical memory bandwidth.
- The MSI GE75 10SGS-295CA Raider utilizes a 2 slot configuration that necessitates the removal of existing modules to reach the maximum capacity since no vacant expansion points exist.
- Integrated memory controllers on the 10th Gen Intel processors may downclock 3200 MHz modules to 2933 MHz depending on the specific CPU SKU installed.
- Accessing the SO-DIMM slots requires the removal of the entire bottom chassis panel which may involve piercing a factory seal sticker in certain regional jurisdictions.
- Physical clearance for memory is restricted to standard height SO-DIMM modules as oversized heat spreaders interfere with the internal chassis bracing.
- Stable operation at maximum capacity requires the use of unbuffered non-ECC modules to maintain compatibility with the mobile chipset architecture.
- Upgrading to 64 GB reduces paging file reliance on the primary storage drive which extends the lifespan of the solid state cells during high intensity workloads.