MSI Gaming GE75 10SGS-295CA Raider RAM upgrade specifications

MSI GE75 10SGS-295CA Raider MSI GE75 10SGS-295CA Raider MSI GE75 10SGS-295CA Raider MSI GE75 10SGS-295CA Raider MSI GE75 10SGS-295CA Raider

The MSI GE75 10SGS-295CA Raider gaming laptop contains two SO-DIMM memory slots supporting DDR4-SDRAM modules at 3200 MHz frequency. Maximum RAM capacity reaches 64 GB total when both slots are populated. Upgrade specifications indicate compatible memory modules must follow SO-DIMM form factor standards. Current memory configuration can be expanded by installing additional DDR4-SDRAM modules into available slots, provided they meet the DDR4-3200 specifications. Specifications confirm dual-slot architecture permits RAM upgrades up to the 64 GB maximum supported capacity for the Raider series laptop.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency3200 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-3200 (PC4-25600)
Bandwidth25.6 GB/s
Laptop Release date23 September 2020

Additional Notes

  • Dual-channel architecture requires populated pairs of matched modules to achieve maximum theoretical memory bandwidth.
  • The MSI GE75 10SGS-295CA Raider utilizes a 2 slot configuration that necessitates the removal of existing modules to reach the maximum capacity since no vacant expansion points exist.
  • Integrated memory controllers on the 10th Gen Intel processors may downclock 3200 MHz modules to 2933 MHz depending on the specific CPU SKU installed.
  • Accessing the SO-DIMM slots requires the removal of the entire bottom chassis panel which may involve piercing a factory seal sticker in certain regional jurisdictions.
  • Physical clearance for memory is restricted to standard height SO-DIMM modules as oversized heat spreaders interfere with the internal chassis bracing.
  • Stable operation at maximum capacity requires the use of unbuffered non-ECC modules to maintain compatibility with the mobile chipset architecture.
  • Upgrading to 64 GB reduces paging file reliance on the primary storage drive which extends the lifespan of the solid state cells during high intensity workloads.