MSI Gaming GF66 11UC-093 Katana RAM upgrade specifications
The MSI GF66 11UC-093 Katana Gaming series laptop features DDR4-SDRAM memory upgrade specifications with two SO-DIMM slots supporting maximum RAM capacity of 64 GB. Compatible memory operates at 3200 MHz frequency. The Gaming GF series Katana model accommodates SO-DIMM form factor modules, enabling users to upgrade the original memory configuration up to the specified maximum capacity. RAM specifications for the GF66 11UC-093 support DDR4 technology with dual-slot architecture, providing upgrade flexibility for enhanced multitasking and performance capabilities.
Memory Upgrade Specifications
| Specification | Value |
|---|---|
| Memory slots | 2x SO-DIMM |
| Form factor | SO-DIMM |
| Memory type | DDR4-SDRAM |
| Frequency | 3200 MHz |
| Maximum RAM | 64 GB |
| Voltage | 1.2V |
| Number of pins | 260-pin |
| Interface | PC4 |
| PC Speed Rating | PC4-3200 (PC4-25600) |
| Bandwidth | 25.6 GB/s |
| Laptop Release date | 22 July 2021 |
Additional Notes
- Dual channel memory architecture is only achievable when both slots contain matching modules to double the available theoretical bandwidth.
- The MSI GF66 11UC-093 Katana requires low voltage 1.2V modules to ensure system stability and prevent thermal throttling within the compact chassis.
- Utilizing 32 GB modules in each slot permits the maximum capacity but may result in higher CAS latency compared to lower density configurations.
- Actual operating frequency depends on the integrated memory controller of the installed processor which might downclock 3200 MHz modules to 2933 MHz or 2666 MHz.
- The SO-DIMM form factor necessitates a manual hardware installation that requires removing the entire bottom panel and breaking a factory seal sticker.
- Mixing modules with different timings will force the motherboard to default to the slowest common denominator among the installed hardware.
- Total memory capacity exceeding the default factory configuration reduces battery runtime due to the increased power draw of high density silicon.