ACER Aspire A114-33-C28D RAM upgrade specifications

ACER A114-33-C28D ACER A114-33-C28D ACER A114-33-C28D ACER A114-33-C28D ACER A114-33-C28D

ACER Aspire Series 1 model A114-33-C28D supports DDR4-SDRAM memory upgrades through 2x SO-DIMM slots. Maximum compatible RAM capacity reaches 8 GB total. Memory specifications include DDR4 modules operating at 2133 MHz frequency with SO-DIMM form factor. Upgrade configuration allows installation of compatible DDR4-SDRAM modules to expand system memory capacity within the specified maximum limitations.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2133 MHz
Maximum RAM8 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2133 (PC4-17064)
Bandwidth17.1 GB/s
Laptop Release date19 December 2020

Additional Notes

  • The ACER Aspire A114-33-C28D relies on a dual-channel SO-DIMM configuration that enables increased memory bandwidth compared to single-module setups when populated with matching capacity modules.
  • The 8 GB ceiling reflects Intel Celeron processor generation memory controller limitations rather than physical slot restrictions, preventing capacity expansion beyond this threshold regardless of module availability.
  • DDR4-2133 represents JEDEC baseline specification speed, indicating the system will downclock higher-frequency modules to this rate, making premium-speed RAM purchases economically inefficient.
  • SO-DIMM installation requires bottom panel removal and potentially warranty seal disruption depending on regional service policies and manufacturing access design.
  • Dual-slot architecture permits asymmetric configurations such as 2 GB plus 4 GB modules, though matching capacities optimize interleaved memory access patterns for marginally improved performance.
  • The 2133 MHz operational frequency produces approximately 17 GB/s theoretical bandwidth in dual-channel mode, adequate for integrated graphics frame buffer sharing but constraining for memory-intensive multitasking scenarios.
  • Memory voltage compatibility is standardized at 1.2V for DDR4-2133 modules, eliminating compatibility risks from voltage variant module selection.
  • CAS latency variations within DDR4-2133 specification range produce negligible real-world performance differences in this platform's typical usage scenarios due to processor-level bottlenecks.
  • Thermal constraints in compact chassis designs may benefit from modules with lower-profile heat spreaders or bare PCB construction to maintain adequate airflow clearance.
  • Non-ECC unbuffered module requirement excludes server-grade memory types, though consumer SO-DIMM market availability makes sourcing straightforward.