ASUS ProArt StudioBook W730G1T-H8021R RAM upgrade specifications

ASUS W730G1T-H8021R ASUS W730G1T-H8021R ASUS W730G1T-H8021R ASUS W730G1T-H8021R ASUS W730G1T-H8021R

ASUS ProArt StudioBook Pro X W730G1T-H8021R RAM upgrade specifications feature DDR4-SDRAM memory compatible with 4x SO-DIMM slots. The workstation supports maximum memory capacity of 128 GB total, with standard operating frequency of 2666 MHz. Compatible memory modules utilize SO-DIMM form factor, enabling flexible upgrade configurations for enhanced multitasking and processing performance in professional creative applications.

Memory Upgrade Specifications

SpecificationValue
Memory slots4x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM128 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date27 January 2020

Additional Notes

  • The presence of 4 SO-DIMM slots in the ASUS ProArt StudioBook W730G1T-H8021R necessitates the use of quad-channel memory configurations to achieve peak bandwidth performance.
  • High-capacity 128 GB setups require high-density modules which often result in increased thermal output within the chassis during sustained rendering tasks.
  • Physical access to all memory banks typically involves the removal of the primary bottom panel and potentially the keyboard assembly if the slots are divided between both sides of the motherboard.
  • Installing modules with frequencies higher than 2666 MHz will result in automatic downclocking to match the hard-coded controller speed of the processor.
  • Achieving the maximum capacity requires 32 GB modules per slot which may limit the availability of low-latency timings compared to smaller capacity sticks.
  • Mixing memory modules with different ranks or densities across the 4 slots can lead to system instability or a fallback to single-channel mode.
  • The hardware architecture supports ECC memory only if the pre-installed processor and motherboard chipset specifically include workstation-grade error correction capabilities.