ASUS ROG G713RW-LL009 RAM upgrade specifications

ASUS G713RW-LL009 ASUS G713RW-LL009 ASUS G713RW-LL009 ASUS G713RW-LL009 ASUS G713RW-LL009

The ASUS ROG Strix G17 G713RW-LL009 gaming laptop features two SO-DIMM slots for memory upgrades. The system supports DDR5-SDRAM modules operating at 4800 MHz frequency. Maximum RAM capacity reaches 32 GB total when both slots are populated with compatible memory modules. Specifications indicate the laptop accommodates DDR5 SO-DIMM form factor upgrades for enhanced multitasking and performance capabilities.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date17 February 2022

Additional Notes

  • The absence of soldered memory on the ASUS G713RW-LL009 motherboard allows for the replacement of both factory modules to ensure identical timings and matched latency.
  • The memory architecture requires 262 pin modules which are physically incompatible with legacy DDR4 hardware due to different voltage key positioning.
  • Utilizing two matching modules enables dual channel bandwidth which prevents bottlenecks during high precision CPU rendering and simulation tasks.
  • Integrated power management circuits on the DDR5 modules shift voltage regulation away from the motherboard to improve thermal efficiency within the chassis.
  • The 4800 MHz frequency provides a significant bandwidth increase over previous standards which is critical for feeding the data requirements of high core count processors.
  • Internal memory expansion beyond the 32 GB limit is restricted by the BIOS firmware and may result in a failure to boot or system instability.
  • Accessing the SO-DIMM slots requires the careful removal of the bottom panel and the disconnection of the internal battery to prevent short circuits during installation.
  • The 1.1V per module operation reduces the power draw from the system battery compared to older memory standards when the device is used in portable mode.