ASUS ROG GL702VI-BA036T RAM upgrade specifications

ASUS GL702VI-BA036T ASUS GL702VI-BA036T ASUS GL702VI-BA036T ASUS GL702VI-BA036T ASUS GL702VI-BA036T

The ASUS ROG Strix GL702VI-BA036T supports DDR4-SDRAM memory upgrades via 2x SO-DIMM slots. Compatible RAM modules operate at 2400 MHz frequency. Maximum memory capacity reaches 32 GB total when both slots are populated with matching modules. RAM upgrade specifications indicate SO-DIMM form factor compatibility. This gaming laptop model accommodates standard DDR4 memory configurations for enhanced multitasking and performance capabilities.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2400 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2400 (PC4-19200)
Bandwidth19.2 GB/s
Laptop Release date20 January 2018

Additional Notes

  • The ASUS ROG GL702VI-BA036T accepts only DDR4 modules, excluding compatibility with older DDR3 or DDR3L memory regardless of physical adapter attempts.
  • The 32 GB maximum capacity enforces a practical ceiling of 16 GB per module when populating both slots for maximum memory.
  • The SO-DIMM form factor requirement prevents installation of standard desktop DIMM modules due to incompatible pin counts and physical dimensions.
  • Memory operating at 2400 MHz represents the native speed ceiling, meaning modules rated at 2666 MHz, 3000 MHz, or higher will downclock to 2400 MHz.
  • Dual-channel architecture through the 2 slots delivers double the memory bandwidth compared to single-module configurations when matched pairs are installed.
  • The chipset lacks support for ECC memory modules, making registered or buffered SO-DIMMs incompatible despite matching physical specifications.
  • Memory access to the slots typically requires bottom panel removal rather than dedicated access doors, affecting upgrade complexity.
  • Mixing modules with different latency timings forces the memory controller to adopt the slower timing profile across both channels.
  • Single-rank versus dual-rank module selection affects memory interleaving efficiency, with dual-rank configurations offering marginal performance gains in bandwidth-intensive applications.
  • Operating voltage locked at 1.2V standard for DDR4 prevents use of low-voltage variants designed for different platform specifications.