ASUS TUF Gaming FA507NU-LP053 RAM upgrade specifications

ASUS FA507NU-LP053 ASUS FA507NU-LP053 ASUS FA507NU-LP053 ASUS FA507NU-LP053 ASUS FA507NU-LP053

ASUS TUF Gaming A15 FA507NU-LP053 laptop features DDR5-SDRAM memory upgrade capabilities. The system includes 2 SO-DIMM slots supporting maximum RAM capacity of 32 GB total. Memory specifications indicate DDR5 operation at 4800 MHz frequency. Compatible upgrades utilize SO-DIMM form factor modules. Maximum expandable memory configuration reaches 32 GB across both slots, enabling significant performance enhancements for multitasking and resource-intensive applications on the FA507NU-LP053 model.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date10 April 2023

Additional Notes

  • The presence of 2 physical SO-DIMM slots confirms that the system maintains a fully modular memory architecture rather than utilizing non-replaceable soldered chips.
  • Utilizing both available slots enables dual-channel memory mode which significantly increases bandwidth for integrated graphics workloads and CPU-bound gaming scenarios.
  • The 4800 MHz DDR5 standard operates at a lower voltage than previous generation DDR4 memory resulting in improved thermal efficiency during high-load processing tasks.
  • Maxing out the ASUS TUF Gaming FA507NU-LP053 at 32 GB of RAM requires the replacement of any existing modules because no additional unoccupied slots exist beyond the primary 2.
  • Installing memory modules with speeds exceeding 4800 MHz will result in the system down-clocking the hardware to the maximum frequency supported by the motherboard firmware.
  • Matching the capacity and latency of the sticks in both slots is necessary to avoid stability issues or the system defaulting to single-channel performance speeds.
  • Physical access to the memory slots involves removing the base panel which exposes internal components to potential electrostatic discharge risks during the installation process.