ASUS TUF Gaming FA507RM-HN008W RAM upgrade specifications

ASUS FA507RM-HN008W ASUS FA507RM-HN008W ASUS FA507RM-HN008W ASUS FA507RM-HN008W ASUS FA507RM-HN008W

ASUS TUF Gaming A15 FA507RM-HN008W laptop features DDR5-SDRAM memory upgrade specifications with two SO-DIMM slots supporting maximum capacity of 32 GB RAM. Compatible memory modules operate at 4800 MHz frequency. The upgrade slots accommodate SO-DIMM form factor modules, enabling users to expand system memory for enhanced performance and multitasking capabilities on the TUF Gaming series notebook.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date25 March 2022

Additional Notes

  • The dual-channel architecture requires matched pairs of modules to maximize the available memory bandwidth and prevent synchronous data bottlenecks.
  • Utilizing SODIMM modules at 4800 MHz necessitates high-density circuit integration which increases internal heat dissipation requirements compared to previous generation standards.
  • The maximum capacity limit indicates a hardware-level restriction on the memory controller or physical address bus within the ASUS TUF Gaming FA507RM-HN008W architecture.
  • Upgrading to higher frequencies than the specified base clock will result in down-clocking to the native system speed due to firmware limitations.
  • The absence of soldered memory on the motherboard allows for a total replacement of the factory hardware rather than being limited to a single expansion slot.
  • Transitioning to DDR5 technology renders older DDR4 modules physically incompatible due to the specific notch alignment and different voltage regulator locations.
  • Installation of non-ECC modules is necessary as the platform does not support error-correcting code functions for consumer-grade stability.
  • System latency performance scales with the density of the 2 occupied slots because filling both channels reduces the overhead on the integrated memory controller.