MSI Creator A10SE-469FR RAM upgrade specifications

MSI A10SE-469FR MSI A10SE-469FR MSI A10SE-469FR MSI A10SE-469FR MSI A10SE-469FR

The MSI Creator 15M series model A10SE-469FR laptop features DDR4-SDRAM memory upgrade specifications. The system contains 2x SO-DIMM slots for RAM expansion. Maximum supported memory capacity reaches 64 GB total. Compatible upgrades utilize SO-DIMM form factor modules operating at 2666 MHz frequency. These specifications define the memory upgrade parameters and maximum RAM configuration available for this Creator series laptop model.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date16 June 2020

Additional Notes

  • Dual channel mode requires identical module capacities in both slots of the MSI Creator A10SE-469FR to double the theoretical memory bandwidth available to the processor.
  • The hardware architecture supports higher frequency modules but will automatically downclock them to the system limit of 2666 MHz regardless of the advertised speed of the upgrade components.
  • Total memory expansion to 64 GB necessitates the removal of all existing factory modules because the motherboard lacks additional vacant headers beyond the two primary SO-DIMM slots.
  • High density 32 GB modules must utilize a specific chip rank configuration to maintain stability with the integrated memory controller on the 10th generation chipset.
  • Physical access to the memory slots involves removing the chassis base plate which may require breaking a factory seal depending on regional service center policies.
  • Thermal constraints within the slim chassis favor modules without integrated heat spreaders to ensure proper clearance and airflow around the motherboard components.
  • Latency performance depends on the CL rating of the replacement sticks as the BIOS does not typically permit manual adjustment of memory timings or voltages.