MSI Gaming GF63 9SC-258IT Thin RAM upgrade specifications

MSI GF63 9SC-258IT Thin MSI GF63 9SC-258IT Thin MSI GF63 9SC-258IT Thin MSI GF63 9SC-258IT Thin MSI GF63 9SC-258IT Thin

The MSI GF63 9SC-258IT Thin Gaming series laptop features DDR4-SDRAM memory upgrade specifications with 2x SO-DIMM slots supporting maximum capacity of 64 GB. Compatible RAM modules operate at 2666 MHz frequency using SO-DIMM form factor. Upgrade slots accommodate DDR4 memory modules for enhanced system performance. Specifications indicate dual memory slots available for RAM expansion on the GF63 9SC-258IT Thin model.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date30 July 2020

Additional Notes

  • The MSI GF63 9SC-258IT Thin supports dual-channel memory architecture through its 2 SO-DIMM slots, enabling up to double the theoretical bandwidth compared to single-channel configurations when paired modules are installed.
  • DDR4-2666 represents JEDEC standard specifications rather than overclocked profiles, eliminating BIOS configuration requirements for frequency stability.
  • The 64 GB maximum capacity indicates chipset-level support for 32 GB density modules per slot, which may require BIOS updates released after the original manufacturing date to ensure stability.
  • SO-DIMM form factor necessitates modules approximately 67.6 mm in length, physically incompatible with standard 133.35 mm desktop DIMM modules regardless of electrical specifications.
  • Mixing memory modules with different speeds will force all installed modules to operate at the frequency of the slowest module, potentially underutilizing faster RAM.
  • Memory upgrades typically preserve manufacturer warranties when performed without disassembling soldered components, though verification of specific regional warranty terms remains advisable.
  • DDR4-2666 operates at 1.2 volts nominal specification, with higher voltage modules potentially causing thermal issues in compact chassis designs without adequate ventilation clearance.
  • The absence of soldered memory indicates all capacity remains user-accessible for replacement or expansion without specialized desoldering equipment.
  • Ninth-generation Intel mobile platforms paired with DDR4-2666 create balanced bandwidth allocation, as faster memory speeds would provide diminishing returns without corresponding CPU or GPU architectural support.