MSI Gaming GL73 8SE-017XFR RAM upgrade specifications

MSI GL73 8SE-017XFR MSI GL73 8SE-017XFR MSI GL73 8SE-017XFR MSI GL73 8SE-017XFR MSI GL73 8SE-017XFR

MSI GL73 8SE-017XFR Gaming series laptop features DDR4-SDRAM memory upgrade specifications. Compatible upgrades utilize SO-DIMM form factor across 2 memory slots. Maximum RAM capacity reaches 32 GB total. Standard frequency operates at 2666 MHz. Specifications detail available upgrade paths for enhanced system performance through expanded memory configuration options.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date25 February 2019

Additional Notes

  • Dual channel architecture requires matching memory modules across both slots to achieve maximum theoretical memory bandwidth and reduce system latency during heavy gaming workloads.
  • The 32 GB capacity limit restricts professional virtualization or heavy video editing workflows that often require 64 GB or more for optimal performance.
  • Installation of memory modules exceeding 2666 MHz results in automatic downclocking to the motherboard chipset limits regardless of the rated speed on the memory sticker.
  • The SO-DIMM form factor indicates a vertical clearance constraint within the MSI GL73 8SE-017XFR chassis that precludes the use of desktop modules or those equipped with bulky integrated heat spreaders.
  • Upgrading from a single module to a dual module configuration significantly improves the minimum frame rates in CPU bound gaming scenarios by doubling the available data paths.
  • Accessing the internal slots necessitates the removal of the entire lower chassis panel which might involve breaking a Factory Seal sticker depending on regional warranty policies.
  • The choice of DDR4-SDRAM ensures compatibility with a wide range of aftermarket low voltage modules but excludes the use of older DDR3 or newer DDR5 technology due to physical notch positioning and voltage differences.