MSI Modern 14 B10RBSW-025ES RAM upgrade specifications

MSI 14 B10RBSW-025ES MSI 14 B10RBSW-025ES MSI 14 B10RBSW-025ES MSI 14 B10RBSW-025ES MSI 14 B10RBSW-025ES

MSI Modern 14 B10RBSW-025ES laptop memory upgrade specifications include one SO-DIMM slot for DDR4-SDRAM modules operating at 2666 MHz frequency. The maximum RAM capacity supported reaches 32 GB. Compatible memory upgrades require SO-DIMM form factor DDR4 modules. Current upgrade specifications allow single-slot expansion to increase system memory performance and multitasking capabilities.

Memory Upgrade Specifications

SpecificationValue
Memory slots1x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date16 June 2020

Additional Notes

  • The presence of a single SO-DIMM slot prevents the utilization of dual-channel memory architecture, restricting the system to single-channel bandwidth speeds.
  • Upgrading the memory requires the total replacement of the existing module rather than adding a second unit since no additional expansion slots exist.
  • Installing a module with a frequency higher than 2666 MHz results in the hardware automatically downclocking the speed to match the integrated memory controller limitations of the MSI Modern 14 B10RBSW-025ES platform.
  • The 32 GB threshold represents the maximum capacity addressable by the BIOS and the processor architecture, meaning larger modules will lead to boot failure or unrecognized capacity.
  • High density 16 GB or 32 GB modules must utilize a compatible rank configuration to ensure the system recognizes the full density during the POST process.
  • Accessing the internal memory slot involves removing the bottom chassis cover, which may require piercing a factory seal sticker depending on regional warranty policies regarding internal servicing.
  • Thermal performance may be affected when using high-capacity modules in this compact chassis due to the increased heat dissipation from higher density memory chips during sustained workloads.