MSI Prestige P75 9SF-472NL Creator RAM upgrade specifications

MSI P75 9SF-472NL Creator MSI P75 9SF-472NL Creator MSI P75 9SF-472NL Creator MSI P75 9SF-472NL Creator MSI P75 9SF-472NL Creator

The MSI Prestige P75 9SF-472NL Creator laptop features DDR4-SDRAM memory specifications with two SO-DIMM slots supporting maximum RAM capacity of 64 GB. Compatible upgrade modules operate at 2666 MHz frequency. The notebook accommodates SO-DIMM form factor memory modules for expansion, enabling users to enhance system performance through memory upgrades within the specified maximum capacity constraints.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date04 June 2019

Additional Notes

  • The MSI Prestige P75 9SF-472NL Creator supports a maximum configuration of 2x32GB modules, requiring matched pairs for dual-channel operation to maintain optimal memory bandwidth.
  • The 2666 MHz frequency specification indicates compatibility with JEDEC standard DDR4-2666 modules, which operate at 1.2V and provide 21.3 GB/s theoretical bandwidth per channel.
  • SO-DIMM modules feature 260-pin contacts and measure 69.6mm in length, distinguishing them from desktop DIMM configurations and requiring mobile-specific memory modules.
  • Mixing modules with different frequencies will result in all modules running at the speed of the slowest installed stick, potentially degrading performance if non-matching memory is added.
  • The dual-slot configuration limits expansion flexibility, as upgrading from a pre-installed configuration requires replacing existing modules rather than adding to empty slots.
  • Memory modules rated above 2666 MHz will downclock to match the supported frequency, offering no performance benefit while potentially costing more than appropriately-specced alternatives.
  • Non-ECC unbuffered (non-registered) SO-DIMM modules are required, as mobile platforms typically lack support for error-correcting or server-grade memory architectures.
  • The memory controller operates in dual-channel mode only when modules are installed in both slots, with single-module configurations reducing memory bandwidth by approximately 50 percent.
  • CAS latency specifications affect real-world performance, with lower CL ratings at identical frequencies providing marginally faster response times for memory-intensive applications.
  • Accessing the SO-DIMM slots typically requires bottom panel removal, which may involve voiding warranty seals depending on regional service policies and warranty terms.
  • Thermal considerations require ensuring adequate airflow around memory modules, as sustained high temperatures can trigger thermal throttling or reduce module lifespan.
  • DDR4 generation limits backward compatibility, preventing installation of DDR3 or earlier generation modules due to physical keying differences and voltage incompatibilities.