MSI Prestige P75 Creator 9SF-298ES RAM upgrade specifications

MSI P75 Creator 9SF-298ES MSI P75 Creator 9SF-298ES MSI P75 Creator 9SF-298ES MSI P75 Creator 9SF-298ES MSI P75 Creator 9SF-298ES

MSI Prestige P Series P75 Creator 9SF-298ES laptop features DDR4-SDRAM memory upgrade specifications. Capacity reaches maximum 64 GB through 2x SO-DIMM slots, each supporting compatible SO-DIMM modules operating at 2666 MHz frequency. Upgrade configurations available range from single to dual populated slots, enabling memory expansion according to system requirements and compatible specifications.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2666 MHz
Maximum RAM64 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2666 (PC4-21328)
Bandwidth21.3 GB/s
Laptop Release date19 April 2019

Additional Notes

  • The 2 slot configuration limits upgrade flexibility since both slots must be populated to reach the 64 GB ceiling, requiring complete replacement rather than incremental expansion.
  • DDR4-2666 operates at PC4-21300 bandwidth specification, which may bottleneck systems attempting to leverage faster processor memory controllers available in 9th generation Intel architectures.
  • SO-DIMM form factor restricts compatibility to laptop-specific modules, eliminating the possibility of using standard desktop DIMM memory regardless of electrical specifications.
  • The MSI Prestige P75 Creator 9SF-298ES enforces a 32 GB per slot maximum, preventing use of higher-density 48 GB or 64 GB single modules even if they match the electrical requirements.
  • Dual-channel architecture requires matched pairs for optimal memory interleaving, meaning asymmetric configurations like 8 GB plus 32 GB will function but sacrifice bandwidth efficiency.
  • The 2666 MHz frequency ceiling prevents utilizing higher-speed DDR4-3200 modules at their rated speeds, as the system will downclock faster memory to match the supported specification.
  • JEDEC standard voltage of 1.2V is implied for DDR4-2666, meaning low-voltage or overclocking-oriented modules may encounter stability issues or refuse POST initialization.
  • Memory access from the bottom panel typically requires removing the entire lower chassis cover, as opposed to dedicated service hatches found in workstation-class laptops.
  • Mixing CAS latency timings between installed modules forces the memory controller to default to the slowest common timing, degrading performance of tighter-latency modules.
  • The 64 GB maximum ensures compatibility with 64-bit operating systems but prevents future-proofing beyond this threshold as software memory requirements increase.