ASUS ROG GA401II-HE004 RAM upgrade specifications

ASUS GA401II-HE004 ASUS GA401II-HE004 ASUS GA401II-HE004 ASUS GA401II-HE004 ASUS GA401II-HE004

ASUS ROG Zephyrus G14 GA401II-HE004 RAM upgrade specifications include DDR4-SDRAM memory compatible with a single SO-DIMM slot. The laptop features on-board memory combined with one upgradeable SO-DIMM slot, supporting a maximum RAM capacity of 24 GB. Memory operates at 3200 MHz frequency. Upgrade specifications indicate the compatible memory type and maximum capacity for this specific laptop model.

Memory Upgrade Specifications

SpecificationValue
Memory slots1x SO-DIMM
Form factorOn-board + SO-DIMM
Memory typeDDR4-SDRAM
Frequency3200 MHz
Maximum RAM24 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-3200 (PC4-25600)
Bandwidth25.6 GB/s
Laptop Release date20 January 2021

Additional Notes

  • The ASUS ROG GA401II-HE004 contains factory-soldered RAM that cannot be removed or replaced without specialized equipment and risks voiding the manufacturer warranty.
  • The single SO-DIMM slot configuration limits future expansion to one additional memory module rather than allowing dual-channel upgrades through matched pairs.
  • The 24 GB maximum capacity indicates 8 GB of soldered memory, restricting the SO-DIMM slot to a 16 GB module as the largest compatible option.
  • Matching the 3200 MHz frequency specification prevents downclocking penalties that occur when mixing modules of different speeds within the same memory controller.
  • DDR4 SO-DIMM modules require 1.2V operating voltage to maintain compatibility with the laptop's power delivery specifications, excluding DDR3L or DDR5 modules.
  • The hybrid memory architecture using both soldered and socketed RAM typically operates in asymmetric dual-channel mode up to the capacity of the smaller module, with remaining capacity running in single-channel mode.
  • Installing a 16 GB SO-DIMM alongside the soldered 8 GB creates a 16 GB dual-channel segment with the remaining 8 GB defaulting to single-channel operation, impacting memory-intensive workloads differently across the address space.
  • CAS latency specifications must align with JEDEC standards for DDR4-3200, typically CL22 for consumer modules, to ensure stable operation without manual timing adjustments.
  • The single-slot design eliminates the option to distribute thermal load across multiple modules, concentrating heat generation in one physical location within the chassis.
  • Non-ECC unbuffered SO-DIMM modules represent the only compatible type, as ECC or registered memory requires different electrical signaling unsupported by consumer mobile platforms.