ASUS TUF Gaming FA507NU-LP220W RAM upgrade specifications
ASUS TUF Gaming A15 FA507NU-LP220W RAM upgrade specifications include DDR5-SDRAM memory with 2x SO-DIMM slots. Maximum RAM capacity reaches 32 GB total. Memory operates at 4800 MHz frequency. Compatible upgrades utilize SO-DIMM form factor DDR5 modules. Specifications support dual-channel memory configuration for enhanced performance. Existing memory can be expanded by upgrading individual slots or both slots simultaneously to achieve maximum supported capacity.
Memory Upgrade Specifications
| Specification | Value |
|---|---|
| Memory slots | 2x SO-DIMM |
| Form factor | SO-DIMM |
| Memory type | DDR5-SDRAM |
| Frequency | 4800 MHz |
| Maximum RAM | 32 GB |
| Voltage | 1.1V |
| Number of pins | 262-pin |
| Interface | PC5 |
| PC Speed Rating | PC5-4800 (PC5-38400) |
| Bandwidth | 38.4 GB/s |
Additional Notes
- The presence of 2 physical SO-DIMM slots confirms that the system does not utilize soldered memory, allowing for a total replacement of the factory modules if necessary.
- Operating at 4800 MHz on the DDR5 platform ensures high memory bandwidth that reduces latency bottlenecks for the CPU during complex multithreaded tasks.
- Scaling the ASUS TUF Gaming FA507NU-LP220W to its 32 GB threshold requires a matched pair of 16 GB modules to maintain optimal dual channel performance and stability.
- Using synchronous DDR5 technology implies the hardware manages voltage regulation directly on the module rather than through the motherboard, simplifying power delivery requirements during high load.
- Installation of aftermarket kits with speeds exceeding the specified frequency will result in the BIOS downclocking the modules to the maximum supported hardware limit.
- The memory architecture supports Error Correction Code functionality internally within each die which significantly improves data integrity compared to previous generations.
- Upgrading to the maximum capacity prevents paging file reliance on the solid state drive, thereby extending the lifespan of the primary storage device by reducing write cycles.