ASUS TUF Gaming FA507NU-LP220W RAM upgrade specifications

ASUS FA507NU-LP220W ASUS FA507NU-LP220W ASUS FA507NU-LP220W ASUS FA507NU-LP220W ASUS FA507NU-LP220W

ASUS TUF Gaming A15 FA507NU-LP220W RAM upgrade specifications include DDR5-SDRAM memory with 2x SO-DIMM slots. Maximum RAM capacity reaches 32 GB total. Memory operates at 4800 MHz frequency. Compatible upgrades utilize SO-DIMM form factor DDR5 modules. Specifications support dual-channel memory configuration for enhanced performance. Existing memory can be expanded by upgrading individual slots or both slots simultaneously to achieve maximum supported capacity.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s

Additional Notes

  • The presence of 2 physical SO-DIMM slots confirms that the system does not utilize soldered memory, allowing for a total replacement of the factory modules if necessary.
  • Operating at 4800 MHz on the DDR5 platform ensures high memory bandwidth that reduces latency bottlenecks for the CPU during complex multithreaded tasks.
  • Scaling the ASUS TUF Gaming FA507NU-LP220W to its 32 GB threshold requires a matched pair of 16 GB modules to maintain optimal dual channel performance and stability.
  • Using synchronous DDR5 technology implies the hardware manages voltage regulation directly on the module rather than through the motherboard, simplifying power delivery requirements during high load.
  • Installation of aftermarket kits with speeds exceeding the specified frequency will result in the BIOS downclocking the modules to the maximum supported hardware limit.
  • The memory architecture supports Error Correction Code functionality internally within each die which significantly improves data integrity compared to previous generations.
  • Upgrading to the maximum capacity prevents paging file reliance on the solid state drive, thereby extending the lifespan of the primary storage device by reducing write cycles.