ASUS TUF Gaming FA507NV-LP104-GAMING RAM upgrade specifications

ASUS FA507NV-LP104-GAMING ASUS FA507NV-LP104-GAMING ASUS FA507NV-LP104-GAMING ASUS FA507NV-LP104-GAMING ASUS FA507NV-LP104-GAMING

ASUS TUF Gaming A15 FA507NV-LP104-GAMING laptop RAM upgrade specifications include DDR5-SDRAM memory compatible with 2x SO-DIMM slots. Maximum supported memory capacity reaches 32 GB total. Memory operates at 4800 MHz frequency. SO-DIMM form factor modules are required for RAM upgrades on this gaming model. Specifications indicate dual-channel memory configuration supporting DDR5 standard for enhanced performance in the ASUS TUF Gaming series.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s

Additional Notes

  • The 32 GB ceiling reflects a dual-channel configuration limited to 16 GB modules, as higher-density SO-DIMMs may lack JEDEC validation for this chipset generation.
  • DDR5-4800 operates at JEDEC baseline speed, meaning advertised XMP or EXPO profiles above 4800 MHz will downclock to match the memory controller's native specification.
  • Mixing modules with different CAS latencies will force all sticks to the slowest timing table, introducing performance asymmetry in bandwidth-sensitive applications.
  • SO-DIMM access on the ASUS TUF Gaming FA507NV-LP104-GAMING typically requires bottom panel removal, voiding seals that may affect regional warranty terms depending on jurisdiction.
  • DDR5's on-die ECC operates independently of system-level error correction, providing silent bit-flip recovery without OS visibility or logging.
  • Single-rank versus dual-rank module topology at 16 GB capacity impacts interleaving efficiency, with dual-rank configurations yielding 5 to 8 percent higher memory throughput in sustained transfers.
  • The 4800 MHz data rate implies a 2400 MHz base clock with double data pumping, making actual latency calculations dependent on absolute CAS values rather than rated CL numbers alone.
  • Non-standard voltages beyond JEDEC's 1.1V specification may trigger thermal throttling in confined laptop chassis, as SO-DIMM power delivery lacks desktop-class VRM headroom.
  • Asymmetric population with unequal module sizes disables flex mode benefits, reverting to single-channel operation for the capacity exceeding the smaller stick's size.
  • DDR5's dual-channel architecture per module differs from DDR4's single 64-bit interface, meaning each SO-DIMM already contains internal channel splitting that affects rank interleaving behavior.