ASUS TUF Gaming FA808UH-S8076W RAM upgrade specifications

ASUS FA808UH-S8076W ASUS FA808UH-S8076W ASUS FA808UH-S8076W ASUS FA808UH-S8076W ASUS FA808UH-S8076W

ASUS TUF Gaming A18 FA808UH-S8076W laptop accommodates DDR5-SDRAM memory upgrades through 2x SO-DIMM slots. The system supports maximum RAM capacity of 64 GB, with compatible modules operating at 5600 MHz frequency. SO-DIMM form factor specifications enable memory expansion for enhanced multitasking and performance capabilities on compatible configurations.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency5600 MHz
Maximum RAM64 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-5600 (PC5-44800)
Bandwidth44.8 GB/s

Additional Notes

  • The ASUS TUF Gaming FA808UH-S8076W accepts only DDR5 modules, eliminating backward compatibility with DDR4 or earlier generation memory standards due to different pin configurations and voltage requirements.
  • The 5600 MHz frequency specification indicates native JEDEC support without requiring XMP profile activation, though actual operating speed depends on processor memory controller capabilities.
  • SO-DIMM form factor limits thermal dissipation compared to full-size DIMMs, making heat spreader designs less effective for sustained high-frequency operation.
  • The 64 GB ceiling requires 2x32 GB module configuration, as no higher density SO-DIMM modules currently exist in DDR5 standard for consumer applications.
  • Dual-channel architecture implementation through the 2 slots enables full bandwidth utilization only when both slots contain identical specification modules.
  • Single-rank versus dual-rank module selection affects memory interleaving performance, with dual-rank configurations potentially offering 5-10% throughput improvement in memory-intensive workloads.
  • CAS latency timings become increasingly critical at 5600 MHz operation, where CL40 versus CL46 modules produce measurable differences in random access patterns.
  • Mixing module capacities triggers asymmetric memory mode, where only the matching capacity portion operates in dual-channel while excess capacity runs in lower-performance single-channel mode.
  • Non-ECC unbuffered module requirement means error correction capability remains absent, making the system unsuitable for applications requiring memory integrity verification.
  • Voltage regulation at 1.1V nominal for DDR5 occurs on-module through PMIC rather than motherboard delivery, affecting compatibility with legacy power management implementations.
  • Warranty preservation typically requires avoiding module removal if factory-installed memory remains soldered, which some gaming laptop configurations implement for base capacity.