ASUS TUF Gaming FA808UM-S8011W RAM upgrade specifications

ASUS FA808UM-S8011W ASUS FA808UM-S8011W ASUS FA808UM-S8011W ASUS FA808UM-S8011W ASUS FA808UM-S8011W

The ASUS TUF Gaming A18 FA808UM-S8011W laptop features DDR5-SDRAM memory specifications with two SO-DIMM slots for RAM upgrades. Maximum compatible memory capacity reaches 64 GB total. The system supports DDR5 memory modules operating at 5600 MHz frequency. SO-DIMM form factor specifications define the physical dimensions required for upgrade modules. Current memory configuration and available slots allow for expansion of existing RAM capacity. DDR5-SDRAM technology provides enhanced performance specifications compared to previous generation memory standards.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency5600 MHz
Maximum RAM64 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-5600 (PC5-44800)
Bandwidth44.8 GB/s

Additional Notes

  • The ASUS TUF Gaming FA808UM-S8011W implements dual-channel DDR5 architecture, requiring matched module pairs for optimal memory interleaving and bandwidth utilization.
  • DDR5-5600 modules operate at JEDEC standard voltage of 1.1V, reducing power consumption by approximately 20% compared to DDR4 alternatives while generating less thermal output during sustained workloads.
  • SO-DIMM configuration indicates laptop-specific modules measuring 67.6mm in length, incompatible with standard 133.35mm desktop DIMM modules regardless of electrical specifications.
  • The 64 GB ceiling translates to a maximum density of 32 GB per module, requiring single-rank or dual-rank chips with 16Gbit die technology for full capacity implementation.
  • Native 5600 MT/s transfer rate delivers theoretical peak bandwidth of 44.8 GB/s per channel or 89.6 GB/s in dual-channel mode, assuming both slots populated with matched speed modules.
  • Memory controller compatibility restricts mixing DDR5 generation modules, as DDR4 or DDR3 modules physically cannot insert due to different notch positioning at pin 144 versus DDR5 notch at pin 115.
  • Upgrading from factory configuration to maximum capacity requires both slots accessible without motherboard removal, though some designs position one slot beneath keyboard assemblies or thermal solutions.
  • Higher frequency modules rated at 6000 MHz or 6400 MHz will downclock to 5600 MHz baseline, as the memory controller's JEDEC specification locks maximum supported speed regardless of module capability.
  • Dual-slot population with asymmetric capacities such as 16 GB plus 32 GB maintains dual-channel operation but may introduce flex mode, where only the matched portion operates in interleaved mode.
  • CAS latency specifications become critical at 5600 MHz operation, where CL40 modules introduce 14.29ns absolute latency versus CL46 modules at 16.43ns, impacting latency-sensitive applications.
  • On-die ECC implementation in DDR5 standard provides error correction within the DRAM chip boundary but does not constitute system-level ECC unless explicitly supported by both CPU and BIOS.
  • Module height constraints in gaming laptops typically limit clearance to 30mm, though low-profile variants at 26.7mm exist for ultra-thin chassis with thermal pipe interference concerns.
  • Warranty preservation requires verifying whether memory access panels carry tamper-evident seals, as some manufacturers restrict user-serviceable upgrades to specific compartments without voiding coverage.