ASUS TUF Gaming FX507VV-LP241W-GAMING RAM upgrade specifications

ASUS FX507VV-LP241W-GAMING ASUS FX507VV-LP241W-GAMING ASUS FX507VV-LP241W-GAMING ASUS FX507VV-LP241W-GAMING ASUS FX507VV-LP241W-GAMING

ASUS TUF Gaming FX507VV-LP241W-GAMING laptop features DDR5-SDRAM memory upgrade specifications with 2x SO-DIMM slots supporting maximum RAM capacity of 32 GB. Compatible memory modules operate at 4800 MHz frequency using SO-DIMM form factor. Upgrade slots accommodate DDR5 specifications for enhanced system performance and multitasking capabilities on gaming hardware platform.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s

Additional Notes

  • The dual-channel architecture requires matches in module capacity and clock speed to achieve maximum memory bandwidth and prevent system-wide latency spikes.
  • Utilizing the maximum 32 GB capacity across both SO-DIMM slots in the ASUS TUF Gaming FX507VV-LP241W-GAMING effectively doubles the available data paths compared to single-channel configurations.
  • The 4800 MHz frequency ceiling indicates that installing modules with higher rated speeds will result in downclocking to motherboard-defined limits.
  • Physical installation of DDR5 modules is restricted by a specific notch alignment that prevents the accidental insertion of DDR4 or older hardware generations.
  • Power efficiency is improved over previous standards due to the presence of on-module power management integrated circuits which shift voltage regulation away from the motherboard.
  • On-die ECC functionality within the DDR5 chips enhances internal data integrity without requiring the processor to support traditional workstation-grade error correction.
  • Future scalability is locked at the 32 GB threshold which prevents the use of 24 GB or 32 GB individual sticks for higher density requirements.
  • Upgrade procedures require the disconnection of the internal battery to prevent short circuits during the manual seating of the SO-DIMM modules.