MSI Gaming GS63VR 7RG-085NE Stealth Pro RAM upgrade specifications

MSI GS63VR 7RG-085NE Stealth Pro MSI GS63VR 7RG-085NE Stealth Pro MSI GS63VR 7RG-085NE Stealth Pro MSI GS63VR 7RG-085NE Stealth Pro MSI GS63VR 7RG-085NE Stealth Pro

The MSI GS63VR 7RG-085NE Stealth Pro gaming laptop features two SO-DIMM slots for memory expansion. The system supports DDR4-SDRAM modules operating at 2400 MHz, with maximum RAM capacity of 32 GB. Compatible upgrade options include DDR4 SO-DIMM memory modules matching the specifications of the GS Gaming series. The GS63VR 7RG-085NE Stealth Pro supports dual-channel memory configuration for optimal performance when both slots are populated with matching RAM specifications.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR4-SDRAM
Frequency2400 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-2400 (PC4-19200)
Bandwidth19.2 GB/s
Laptop Release date21 March 2018

Additional Notes

  • The motherboard architecture of the MSI GS63VR 7RG-085NE Stealth Pro utilizes a dual channel configuration which requires matching pairs of modules to maximize memory bandwidth and avoid single channel performance penalties.
  • Physical access to the memory slots requires removal of the entire base panel and potentially the flip of the motherboard since this chassis design often places the RAM sockets on the side facing the keyboard.
  • Installing modules with frequencies higher than 2400 MHz results in automatic downclocking to the system bus limit determined by the Intel 7th Gen processor architecture.
  • Maximum capacity is reached by occupying both slots with 16 GB sticks as the hardware does not support 32 GB single dimm density.
  • Thermal management constraints in the slim Stealth Pro casing mean that memory modules with thick heat spreaders may interfere with the bottom cover clearance.
  • Mismatching the CAS latency between the two occupied slots forces the system to default to the timings of the slowest module which increases overall memory latency.
  • Voltage requirements are fixed at 1.2V for DDR4 and the use of high voltage overclocking memory is restricted by the locked mobile BIOS environment.