ASUS ROG G614JV-N4156W RAM upgrade specifications

ASUS G614JV-N4156W ASUS G614JV-N4156W ASUS G614JV-N4156W ASUS G614JV-N4156W ASUS G614JV-N4156W

ASUS ROG Strix G16 G614JV-N4156W laptop memory upgrade specifications include DDR5-SDRAM compatibility with 2x SO-DIMM slots supporting maximum RAM capacity of 32 GB total. Upgrade options utilize SO-DIMM form factor modules operating at 4800 MHz frequency. Compatible memory modules must meet DDR5-SDRAM specifications for proper functioning within laptop architecture. Maximum upgrade capacity allows installation of dual 16 GB modules to achieve 32 GB total system memory, providing enhanced multitasking and application performance capabilities.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date01 March 2023

Additional Notes

  • The presence of 2 SO-DIMM slots confirms a dual-channel architecture which requires identical module pairs to optimize memory bandwidth for the ASUS ROG G614JV-N4156W processor.
  • The maximum capacity limit of 32 GB dictates that 16 GB is the largest individual module size supported per slot.
  • DDR5 technology operates at a lower native voltage than previous generations which reduces heat dissipation requirements within the localized memory area of the motherboard.
  • Installing modules with speeds exceeding 4800 MHz will result in the system downclocking the hardware to match the maximum rated bus frequency defined by the firmware.
  • The SO-DIMM form factor necessitates the use of 262-pin modules specifically designed for mobile chipsets rather than desktop DIMM hardware.
  • Upgrading beyond the factory configuration requires the removal of existing modules if both slots are populated because there are no additional vacant expansion points.
  • Integrated power management circuits on the DDR5 sticks shift voltage regulation away from the mainboard and onto the memory module itself for improved power efficiency.