ASUS TUF Dash FX516PM-HN024W-BE RAM upgrade specifications

ASUS FX516PM-HN024W-BE ASUS FX516PM-HN024W-BE ASUS FX516PM-HN024W-BE ASUS FX516PM-HN024W-BE ASUS FX516PM-HN024W-BE

ASUS TUF Dash F15 FX516PM-HN024W-BE RAM upgrade specifications include DDR4-SDRAM memory operating at 3200 MHz. The laptop features one SO-DIMM slot for memory expansion, supporting maximum RAM capacity of 32 GB. The system combines on-board memory with upgradeable SO-DIMM configuration, allowing users to enhance overall memory capacity through compatible DDR4 modules installed in the available slot.

Memory Upgrade Specifications

SpecificationValue
Memory slots1x SO-DIMM
Form factorOn-board + SO-DIMM
Memory typeDDR4-SDRAM
Frequency3200 MHz
Maximum RAM32 GB
Voltage1.2V
Number of pins260-pin
InterfacePC4
PC Speed RatingPC4-3200 (PC4-25600)
Bandwidth25.6 GB/s
Laptop Release date10 January 2022

Additional Notes

  • The ASUS TUF Dash FX516PM-HN024W-BE contains soldered memory on the motherboard, limiting practical expansion to a single SO-DIMM slot rather than offering full dual-channel upgrade flexibility.
  • Adding a 32 GB SO-DIMM to the vacant slot will create an asymmetrical memory configuration that may reduce effective bandwidth utilization compared to matched dual-channel pairs, particularly under sustained computational or rendering workloads.
  • Replacement of the soldered portion requires full motherboard service and voids standard warranty protections, making the existing on-board capacity a permanent constraint rather than an upgradeable component.
  • DDR4-3200 MHz modules are widely available at competitive prices in SO-DIMM form factors, but timing specifications (CAS latency, voltage) must match the factory soldered memory to avoid stability issues across the mixed configuration.
  • The 32 GB ceiling represents a practical upper limit for this architecture; systems exceeding this threshold would require full platform replacement rather than incremental upgrades.
  • Latency penalties occur when the CPU addresses data split between soldered and modular memory banks, as requests cannot be perfectly synchronized across mismatched physical locations on the board.