ASUS TUF Dash FX517ZC-HN098W RAM upgrade specifications

ASUS FX517ZC-HN098W ASUS FX517ZC-HN098W ASUS FX517ZC-HN098W ASUS FX517ZC-HN098W ASUS FX517ZC-HN098W

The ASUS TUF Dash F15 FX517ZC-HN098W supports DDR5-SDRAM memory upgrades with 2x SO-DIMM slots. Maximum RAM capacity reaches 32 GB. Compatible memory operates at 4800 MHz frequency. Upgrade specifications utilize SO-DIMM form factor modules. Memory upgrade options provide expanded system capacity for the FX517ZC-HN098W laptop model within supported compatibility parameters.

Memory Upgrade Specifications

SpecificationValue
Memory slots2x SO-DIMM
Form factorSO-DIMM
Memory typeDDR5-SDRAM
Frequency4800 MHz
Maximum RAM32 GB
Voltage1.1V
Number of pins262-pin
InterfacePC5
PC Speed RatingPC5-4800 (PC5-38400)
Bandwidth38.4 GB/s
Laptop Release date25 May 2022

Additional Notes

  • The ASUS TUF Dash FX517ZC-HN098W implements dual-channel memory architecture through its 2 SO-DIMM slots, meaning maximum bandwidth requires matched module pairs.
  • The 32 GB ceiling restricts configurations to either 2x16 GB modules or asymmetric combinations, eliminating future-proofing beyond this threshold regardless of individual module capacity.
  • DDR5-4800 represents the minimum JEDEC standard for DDR5 technology, positioning this system at the entry tier of DDR5 performance compared to higher-speed DDR5-5200 or DDR5-5600 implementations.
  • Mixing modules with different speeds will force all installed memory to operate at the lowest common frequency, negating any performance advantage from faster-rated modules.
  • SO-DIMM physical dimensions measure 67.6mm in length versus desktop DIMM's 133.35mm, making standard desktop memory modules mechanically incompatible regardless of electrical specifications.
  • DDR5 modules require 1.1V operating voltage compared to DDR4's 1.2V, creating absolute electrical incompatibility with previous-generation memory despite identical SO-DIMM form factors.
  • Dual-rank modules may encounter stability limitations on certain motherboard implementations when populating both slots at maximum capacity, particularly at higher frequencies.
  • The on-die ECC feature inherent to DDR5 architecture operates transparently at the DRAM level but does not provide user-accessible error reporting like traditional ECC memory.
  • Accessing internal SO-DIMM slots typically requires bottom panel removal, which may involve breaking manufacturer seals that void warranty coverage depending on regional consumer protection laws.
  • Thermal performance benefits from lower DDR5 operating voltages may be offset by higher power consumption during active operations compared to equivalent DDR4 configurations.
  • Memory channel population affects integrated graphics performance more significantly than discrete GPU performance, though bandwidth limitations can create CPU-bound scenarios in specific workloads.
  • Single-module configurations halve available memory bandwidth by utilizing only one of the two channels, creating measurable performance deficits in bandwidth-sensitive applications.